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Hot-carrier effects in 0.15 mu m low dose SIMOX N-MOSFETs

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Hot-carrier effects in 0.15 mu m low dose SIMOX N-MOSFETs
Dimitrakis, P Jomaah, J Balestra, F Papaioannou, GJ
The induced damage in Si film due to hot-carrier degradation of partially depleted low dose SIMOX 0.15 mum gate length NMOSFET’s operating near the off state were thoroughly investigated. It was discovered that the less the doping density, the longer the device lifetime. The front channel subthreshold swing was monitored mid ii was found to be logarithmically dependant on stress time. BOX leakage current exhibited a threshold ill stress time after which it was decreased. This threshold depends on the stress conditions. (EN)
scientific_publication_inproceedings
Επιστημονική δημοσίευση - Ανακοίνωση Συνεδρίου (EL)
Scientific publication - Conference Paper (EN)
University of Athens
Pergamos Digital Library
Conference Paper
English
2000-01-01
uoadl:3052630
https://pergamos.lib.uoa.gr/uoa/dl/object/uoadl:3052630
IEEE Comput. Soc (EL)
IEEE Comput. Soc (EN)



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